bay linear, inc 2478 armstrong street, livermore, ca 94550 tel: (925) 989-7144, fax: (925) 940-9556 www.baylinear.com n-channel field effect transistor 12N035 ordering information device package temp. 12N035t to-220 0 to 150 c 12N035s to-263 ( d 2 ) 0 to 150 c absolute maximum rating symbol parameter max unit drain current -continues 12 i d -pulsed 36 a v dss drain-source voltage 30 v v gsv gate source voltage 20 v total power dissipation @ t c =25 c 50 w p d derate above 25 c 0.4 w/ c t j operating and storage t stg temperature range -65 to 175 c description the bay linear n-channel power field effect transistors are produced using high cell density dmos technology , these devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. the to-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. also, available in a d 2 surface mount power package with a power dissipation up to 2 watts features ? critical dc electrical parameters specified at elevated temp. ? rugged internal source-drain diode can eliminate the need for external zener diode transient suppresser ? super high density cell design for extremely low r ds(on) v dss = 30v r ds (on) = 0.045 ? i d = 12a bay linear bay linear bay linear bay linear ins p ire the linear power ins p ire the linear power ins p ire the linear power ins p ire the linear power
bay linear, inc 2478 armstrong street, livermore, ca 94550 tel: (925) 989-7144, fax: (925) 940-9556 www.baylinear.com 12N035 electrical characteristics ( t c = 25 c unless otherwise specified) symbol parameter conditions min typ max units off characterstics bv dss drain source breakdown voltage v gs =0v, i d =250 a 30 v i dss zero gate voltage drain current v ds =24v v gs =0v 10 a i gblf gate-body leakage forward v gs =20v v ds =0v 100 na i gblr gate-body leakage reverse v gs =-20v v ds =0v -100 na on characterstics v gs(th) gate threshold voltage v ds =v gs i d =250 a 1 3 v r ds(on) static drain voltage v gs =10v, i d =26a v cs =4.5v, i o =21a 0.045 0.06 ? ? ? ? i d(on) on-state drain current v gs =10v 12 a g fs forward tranconductance v ds =10v, i d =6a 9 s dynamic charactristics c iss input capacitance 550 pf c oss output capacitance 300 pf c rss reverse tras. capacitance v ds = 10v, v gs =0v f=1.0 mhz 150 pf switching characterstics t d(on) turn-on delay time 16 t r turn-on rise time 250 t d(off) turn-off delay time 90 t f turn-off fall time v dd =10v i d =12a, v ds =10v r gen =24 ? 200 ns source drain diode chracteristics i s maxim continuous drain source diode forward current 12 a v ds (note) drain source diode forward voltage v gs =0v i s =6a 1.30 v thermai chracteristics r jc thermal resistance, junction to case 5 c/w r jc thermal resistance, junction to ambient 100 c/w note: pulse test: pulse with 300 s, duty cycle 2.0% advance information - these data sheets contain descriptions of products that are in development. the specifications are based on the engineering ca lculations, computer simulations and/ or initial prototype evaluation. preliminary information - these data sheets contain minimum and maximum specifications that are based on the initial device characterizations. these lim its are subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges. the application circuit examples are only to explain the representative applications of the devices and are not intended to gua rantee any circuit design or permit any industrial property right to other rights to execute. bay linear takes no responsibility for any problems related to any industrial property right resulting from the use of the contents shown in the data book. typical parameters can and do vary in different applications. customer?s technical experts must validate all operating parameters including ? typical? for each customer applic ation. life support and nuclear policy bay linear products are not authorized for and should not be used within life support systems which are intended for surgical implants into the body to support or sustain life, in aircraft, sp ace equipment, submarine, or nuclear facility applications wit hout the specific written consent of bay linear president.
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